RJK6025DPD-00#J2 - MOSFET N-CH 600V 1A MP3A

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RJK6025DPD-00#J2

Sisemine osa number

AX-RJK6025DPD-00#J2

tootja

Renesas Electronics America

Lühikirjeldus

MOSFET N-CH 600V 1A MP3A

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

12968 Pieces

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~~USD 0~~

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- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on RJK6025DPD-00#J2 laos müüa.

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spetsifikatsioonid RJK6025DPD-00#J2

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : RJK6025DPD-00#J2

tootja : Renesas Electronics America

kirjeldus : MOSFET N-CH 600V 1A MP3A

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 600V

Praegune - pidev äravool (id) @ 25 ° C : 1A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 17.5 Ohm @ 500mA, 10V

Vgs (th) (maksimaalselt) @ id : 5V @ 1mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 5nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 37.5pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 29.7W (Tc)

Töötemperatuur : 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : MP-3A

Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63

kaal : -

tingimus : Uus ja originaal

seotud lingid : RJK60 , RJK6025D

dokumendid RJK6025DPD-00#J2

andmelehe : RJK6025DPD-00#J2.pdf

Seotud tooted RJK6025DPD-00#J2 Renesas Electronics America

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