NS8JTHE3_A/P - DIODE GEN PURP 600V 8A TO220AC

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NS8JTHE3_A/P

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AX-NS8JTHE3_A/P

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Vishay Semiconductor Diodes Division

Lühikirjeldus

DIODE GEN PURP 600V 8A TO220AC

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

22239 Pieces

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~~USD 0~~

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- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on NS8JTHE3_A/P laos müüa.

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spetsifikatsioonid NS8JTHE3_A/P

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : NS8JTHE3_A/P

tootja : Vishay Semiconductor Diodes Division

kirjeldus : DIODE GEN PURP 600V 8A TO220AC

seeria : Automotive, AEC-Q101

Osa olek : Obsolete

Dioodi tüüp : Standard

Pinge - tagurpidi alalisvool (Vr) (max) : 600V

Praegune - keskmine puhastatud (Io) : 8A

Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.1V @ 8A

Kiirus : Standard Recovery >500ns, > 200mA (Io)

Vastupidine taastumisaeg (trr) : -

Praegune - vastupidine leke @ Vr : 10µA @ 600V

Mahtuvus @ Vr, F : 55pF @ 4V, 1MHz

Paigaldus tüüp : Through Hole

Pakett / kohver : TO-220-2

Tarnija seadme pakett : TO-220AC

Töötemperatuur - ristmik : -55°C ~ 150°C

kaal : -

tingimus : Uus ja originaal

seotud lingid : NS8J , NS8JTH

dokumendid NS8JTHE3_A/P

andmelehe : NS8JTHE3_A/P.pdf

Seotud tooted NS8JTHE3_A/P Vishay Semiconductor Diodes Division

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