TPW1R306PL,L1Q - X35 PB-F POWER MOSFET TRANSISTOR

Tootja arv

TPW1R306PL,L1Q

Sisemine osa number

AX-TPW1R306PL,L1Q

tootja

Toshiba Semiconductor and Storage

Lühikirjeldus

X35 PB-F POWER MOSFET TRANSISTOR

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

333995 Pieces

Viide Hind

~~USD 0.84~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on TPW1R306PL,L1Q laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid TPW1R306PL,L1Q

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : TPW1R306PL,L1Q

tootja : Toshiba Semiconductor and Storage

kirjeldus : X35 PB-F POWER MOSFET TRANSISTOR

seeria : U-MOSIX-H

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 60V

Praegune - pidev äravool (id) @ 25 ° C : 260A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 1.29 mOhm @ 50A, 10V

Vgs (th) (maksimaalselt) @ id : 2.5V @ 1mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 91nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 8100pF @ 30V

FET funktsioon : -

Võimsuse hajumine (max) : 960mW (Ta), 170W (Tc)

Töötemperatuur : 175°C

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 8-DSOP Advance

Pakett / kohver : 8-PowerVDFN

kaal : -

tingimus : Uus ja originaal

seotud lingid : TPW1 , TPW1R30

dokumendid TPW1R306PL,L1Q

andmelehe : TPW1R306PL,L1Q.pdf

Seotud tooted TPW1R306PL,L1Q Toshiba Semiconductor and Storage

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