IPT60R150G7XTMA1 - MOSFET N-CH 650V 17A HSOF-8

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IPT60R150G7XTMA1

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AX-IPT60R150G7XTMA1

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Infineon Technologies

Lühikirjeldus

MOSFET N-CH 650V 17A HSOF-8

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

246390 Pieces

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~~USD 1.138686~~

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- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on IPT60R150G7XTMA1 laos müüa.

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spetsifikatsioonid IPT60R150G7XTMA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IPT60R150G7XTMA1

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 650V 17A HSOF-8

seeria : CoolMOS™ G7

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 650V

Praegune - pidev äravool (id) @ 25 ° C : 17A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 150 mOhm @ 5.3A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 260µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 23nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 902pF @ 400V

FET funktsioon : -

Võimsuse hajumine (max) : 106W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PG-HSOF-8-2

Pakett / kohver : 8-PowerSFN

kaal : -

tingimus : Uus ja originaal

seotud lingid : IPT60 , IPT60R15

dokumendid IPT60R150G7XTMA1

andmelehe : IPT60R150G7XTMA1.pdf

Seotud tooted IPT60R150G7XTMA1 Infineon Technologies

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