HGTP10N120BN - IGBT 1200V 35A 298W TO220AB

Tootja arv
Sisemine osa number
Lühikirjeldus
IGBT 1200V 35A 298W TO220AB
RoHS-staatus
Pliivaba / RoHS Vastavuses
Tarne aeg
1-2 päeva
saadaval Kogus
262110 Pieces
Viide Hind
USD 1.070376
Meie hind
- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on HGTP10N120BN laos müüa.
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spetsifikatsioonid HGTP10N120BN

kvaliteedi tagamise : 365 päeva garantii
stock Resource : Frantsiisi Edasimüüja / Tootja Direct
Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Osa number : HGTP10N120BN
tootja : ON Semiconductor
kirjeldus : IGBT 1200V 35A 298W TO220AB
seeria : -
Osa olek : Not For New Designs
IGBT tüüp : NPT
Pinge - kollektori emitteri jaotus (max) : 1200V
Praegune - koguja (Ic) (maksimaalselt) : 35A
Praegune - koguja impulss (Icm) : 80A
Vce (sees) (max) @ Vge, Ic : 2.7V @ 15V, 10A
Võimsus - max : 298W
Energia vahetamine : 320µJ (on), 800µJ (off)
Sisendi tüüp : Standard
Värava laadimine : 100nC
Td (sisse / välja) @ 25 ° C : 23ns/165ns
Testi seisund : 960V, 10A, 10 Ohm, 15V
Vastupidine taastumisaeg (trr) : -
Töötemperatuur : -55°C ~ 150°C (TJ)
Paigaldus tüüp : Through Hole
Pakett / kohver : TO-220-3
Tarnija seadme pakett : TO-220-3
kaal : -
tingimus : Uus ja originaal
seotud lingid : HGTP , HGTP10

dokumendid HGTP10N120BN

andmelehe : HGTP10N120BN.pdf

Seotud tooted HGTP10N120BN ON Semiconductor

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