IRF6621TR1PBF - MOSFET N-CH 30V 12A DIRECTFET

Tootja arv
Sisemine osa number
Lühikirjeldus
MOSFET N-CH 30V 12A DIRECTFET
RoHS-staatus
Pliivaba / RoHS Vastavuses
Tarne aeg
1-2 päeva
saadaval Kogus
8992 Pieces
Viide Hind
USD 0
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- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on IRF6621TR1PBF laos müüa.
Saatmine võimalusi ja tarneaeg:
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Normal Post: 10-15 days.
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spetsifikatsioonid IRF6621TR1PBF

kvaliteedi tagamise : 365 päeva garantii
stock Resource : Frantsiisi Edasimüüja / Tootja Direct
Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Osa number : IRF6621TR1PBF
tootja : Infineon Technologies
kirjeldus : MOSFET N-CH 30V 12A DIRECTFET
seeria : HEXFET®
Osa olek : Obsolete
FET tüüp : N-Channel
Tehnoloogia : MOSFET (Metal Oxide)
Tühjendage toitepingele (Vdss) : 30V
Praegune - pidev äravool (id) @ 25 ° C : 12A (Ta), 55A (Tc)
Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V
Rds sees (max) @ id, Vgs : 9.1 mOhm @ 12A, 10V
Vgs (th) (maksimaalselt) @ id : 2.25V @ 250µA
Värava laadimine (Qg) (maksimaalselt) @ Vgs : 17.5nC @ 4.5V
VG (maksimaalselt) : ±20V
Sisendmahtuvus (Ciss) (Max) @ Vds : 1460pF @ 15V
FET funktsioon : -
Võimsuse hajumine (max) : 2.2W (Ta), 42W (Tc)
Töötemperatuur : -40°C ~ 150°C (TJ)
Paigaldus tüüp : Surface Mount
Tarnija seadme pakett : DIRECTFET™ SQ
Pakett / kohver : DirectFET™ Isometric SQ
kaal : -
tingimus : Uus ja originaal
seotud lingid : IRF6 , IRF662

dokumendid IRF6621TR1PBF

andmelehe : IRF6621TR1PBF.pdf

Seotud tooted IRF6621TR1PBF Infineon Technologies

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