NVMFS6B05NWFT1G - MOSFET N-CH 100V 104A SO8FL

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NVMFS6B05NWFT1G

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Lühikirjeldus

MOSFET N-CH 100V 104A SO8FL

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1-2 päeva

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spetsifikatsioonid NVMFS6B05NWFT1G

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Osa number : NVMFS6B05NWFT1G

tootja : ON Semiconductor

kirjeldus : MOSFET N-CH 100V 104A SO8FL

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 100V

Praegune - pidev äravool (id) @ 25 ° C : -

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 8 mOhm @ 20A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 44nC @ 10V

VG (maksimaalselt) : ±16V

Sisendmahtuvus (Ciss) (Max) @ Vds : 3100pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 3.8W (Ta), 165W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 5-DFN (5x6) (8-SOFL)

Pakett / kohver : 8-PowerTDFN

kaal : -

tingimus : Uus ja originaal

seotud lingid : NVMFS , NVMFS6B

dokumendid NVMFS6B05NWFT1G

andmelehe : NVMFS6B05NWFT1G.pdf

Seotud tooted NVMFS6B05NWFT1G ON Semiconductor

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