SPB02N60C3ATMA1 - MOSFET N-CH 650V 1.8A D2PAK

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SPB02N60C3ATMA1

Sisemine osa number

AX-SPB02N60C3ATMA1

tootja

Infineon Technologies

Lühikirjeldus

MOSFET N-CH 650V 1.8A D2PAK

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

50352 Pieces

Viide Hind

~~USD 0~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on SPB02N60C3ATMA1 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid SPB02N60C3ATMA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SPB02N60C3ATMA1

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 650V 1.8A D2PAK

seeria : CoolMOS™

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 650V

Praegune - pidev äravool (id) @ 25 ° C : 1.8A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 3 Ohm @ 1.1A, 10V

Vgs (th) (maksimaalselt) @ id : 3.9V @ 80µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 12.5nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 200pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 25W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PG-TO263-3-2

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

kaal : -

tingimus : Uus ja originaal

seotud lingid : SPB02 , SPB02N6

dokumendid SPB02N60C3ATMA1

andmelehe : SPB02N60C3ATMA1.pdf

Seotud tooted SPB02N60C3ATMA1 Infineon Technologies

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