IPD65R1K5CEAUMA1 - MOSFET N-CH 700V 5.2A TO252-3

Tootja arv

IPD65R1K5CEAUMA1

Sisemine osa number

AX-IPD65R1K5CEAUMA1

tootja

Infineon Technologies

Lühikirjeldus

MOSFET N-CH 700V 5.2A TO252-3

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1781080 Pieces

Viide Hind

~~USD 0.157524~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on IPD65R1K5CEAUMA1 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid IPD65R1K5CEAUMA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IPD65R1K5CEAUMA1

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 700V 5.2A TO252-3

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 700V

Praegune - pidev äravool (id) @ 25 ° C : 5.2A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 1.5 Ohm @ 1A, 10V

Vgs (th) (maksimaalselt) @ id : 3.5V @ 100µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 10.5nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 225pF @ 100V

FET funktsioon : -

Võimsuse hajumine (max) : 53W (Tc)

Töötemperatuur : -40°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PG-TO252-3

Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63

kaal : -

tingimus : Uus ja originaal

seotud lingid : IPD65 , IPD65R1K

dokumendid IPD65R1K5CEAUMA1

andmelehe : IPD65R1K5CEAUMA1.pdf

Seotud tooted IPD65R1K5CEAUMA1 Infineon Technologies

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