BAS316,H3F - DIODE GEN PURP 100V 250MA USC

Tootja arv
Sisemine osa number
Lühikirjeldus
DIODE GEN PURP 100V 250MA USC
RoHS-staatus
Pliivaba / RoHS Vastavuses
Tarne aeg
1-2 päeva
saadaval Kogus
15281280 Pieces
Viide Hind
USD 0.01836
Meie hind
- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on BAS316,H3F laos müüa.
Saatmine võimalusi ja tarneaeg:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Maksevõimalused:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
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spetsifikatsioonid BAS316,H3F

kvaliteedi tagamise : 365 päeva garantii
stock Resource : Frantsiisi Edasimüüja / Tootja Direct
Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Osa number : BAS316,H3F
tootja : Toshiba Semiconductor and Storage
kirjeldus : DIODE GEN PURP 100V 250MA USC
seeria : -
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 100V
Praegune - keskmine puhastatud (Io) : 250mA
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.25V @ 150mA
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 3ns
Praegune - vastupidine leke @ Vr : 200nA @ 80V
Mahtuvus @ Vr, F : 0.35pF @ 0V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : SC-76, SOD-323
Tarnija seadme pakett : USC
Töötemperatuur - ristmik : 150°C (Max)
kaal : -
tingimus : Uus ja originaal
seotud lingid : BAS , BAS31

dokumendid BAS316,H3F

andmelehe : BAS316,H3F.pdf

Seotud tooted BAS316,H3F Toshiba Semiconductor and Storage

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