AS4C64M16MD1-5BIN - IC DRAM 1G PARALLEL 60FBGA

Tootja arv

AS4C64M16MD1-5BIN

Sisemine osa number

AX-AS4C64M16MD1-5BIN

tootja

Alliance Memory, Inc.

Lühikirjeldus

IC DRAM 1G PARALLEL 60FBGA

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

42462 Pieces

Viide Hind

~~USD 0~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on AS4C64M16MD1-5BIN laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid AS4C64M16MD1-5BIN

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : AS4C64M16MD1-5BIN

tootja : Alliance Memory, Inc.

kirjeldus : IC DRAM 1G PARALLEL 60FBGA

seeria : -

Osa olek : Obsolete

Mälu tüüp : Volatile

Mälu vorming : DRAM

Tehnoloogia : SDRAM - Mobile LPDDR

Mälu suurus : 1Gb (64M x 16)

Kella sagedus : 200MHz

Kirjutage tsükli aeg - sõna, leht : 15ns

Juurdepääsu aeg : 5ns

Mäluliides : Parallel

Pinge - toide : 1.7V ~ 1.95V

Töötemperatuur : -40°C ~ 85°C (TA)

Paigaldus tüüp : Surface Mount

Pakett / kohver : 60-TFBGA

Tarnija seadme pakett : 60-FBGA (8x10)

kaal : -

tingimus : Uus ja originaal

seotud lingid : AS4C6 , AS4C64M1

dokumendid AS4C64M16MD1-5BIN

andmelehe : AS4C64M16MD1-5BIN.pdf

Seotud tooted AS4C64M16MD1-5BIN Alliance Memory, Inc.

Osa number	Bränd	kirjeldus
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WF135250WL50236BJ1	Vishay Beyschlag	CAP CER 5000PF 16KV SCREW.
WF165278WP60238BJ1	Vishay Beyschlag	CAP CER 6000PF 20KV SCREW.
GRM0225C1E5R6DDAEL	Murata Electronics North America	CAP CER 5.6PF 25V C0G/NP0 01005.
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