ZXMN2F30FHQTA - MOSFET N-CH 20V 4.9A SOT23-3

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ZXMN2F30FHQTA

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AX-ZXMN2F30FHQTA

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Diodes Incorporated

Lühikirjeldus

MOSFET N-CH 20V 4.9A SOT23-3

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

3315180 Pieces

Viide Hind

~~USD 0.08463~~

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- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on ZXMN2F30FHQTA laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid ZXMN2F30FHQTA

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : ZXMN2F30FHQTA

tootja : Diodes Incorporated

kirjeldus : MOSFET N-CH 20V 4.9A SOT23-3

seeria : Automotive, AEC-Q101

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 20V

Praegune - pidev äravool (id) @ 25 ° C : 4.9A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 2.5V, 4.5V

Rds sees (max) @ id, Vgs : 45 mOhm @ 2.5A, 4.5V

Vgs (th) (maksimaalselt) @ id : 1.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 4.8nC @ 10V

VG (maksimaalselt) : ±12V

Sisendmahtuvus (Ciss) (Max) @ Vds : 452pF @ 10V

FET funktsioon : -

Võimsuse hajumine (max) : 1.4W

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : SOT-23-3

Pakett / kohver : TO-236-3, SC-59, SOT-23-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : ZXMN , ZXMN2F

dokumendid ZXMN2F30FHQTA

andmelehe : ZXMN2F30FHQTA.pdf

Seotud tooted ZXMN2F30FHQTA Diodes Incorporated

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