DMN1260UFA-7B - MOSFET N-CH 12V 0.5A X2DFN-3

Tootja arv

DMN1260UFA-7B

Sisemine osa number

AX-DMN1260UFA-7B

tootja

Diodes Incorporated

Lühikirjeldus

MOSFET N-CH 12V 0.5A X2DFN-3

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

7229545 Pieces

Viide Hind

~~USD 0.038808~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on DMN1260UFA-7B laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid DMN1260UFA-7B

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : DMN1260UFA-7B

tootja : Diodes Incorporated

kirjeldus : MOSFET N-CH 12V 0.5A X2DFN-3

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 12V

Praegune - pidev äravool (id) @ 25 ° C : 500mA (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 1.5V, 4.5V

Rds sees (max) @ id, Vgs : 366 mOhm @ 200mA, 4.5V

Vgs (th) (maksimaalselt) @ id : 1V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 0.96nC @ 4.5V

VG (maksimaalselt) : ±8V

Sisendmahtuvus (Ciss) (Max) @ Vds : 60pF @ 10V

FET funktsioon : -

Võimsuse hajumine (max) : 360mW (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : X2-DFN0806-3

Pakett / kohver : 3-XFDFN

kaal : -

tingimus : Uus ja originaal

seotud lingid : DMN1 , DMN126

dokumendid DMN1260UFA-7B

andmelehe : DMN1260UFA-7B.pdf

Seotud tooted DMN1260UFA-7B Diodes Incorporated

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