1N6479-E3/97 - DIODE GEN PURP 100V 1A DO213AB

Tootja arv
Sisemine osa number
Lühikirjeldus
DIODE GEN PURP 100V 1A DO213AB
RoHS-staatus
Pliivaba / RoHS Vastavuses
Tarne aeg
1-2 päeva
saadaval Kogus
5126700 Pieces
Viide Hind
USD 0.054726
Meie hind
- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on 1N6479-E3/97 laos müüa.
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spetsifikatsioonid 1N6479-E3/97

kvaliteedi tagamise : 365 päeva garantii
stock Resource : Frantsiisi Edasimüüja / Tootja Direct
Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Osa number : 1N6479-E3/97
tootja : Vishay Semiconductor Diodes Division
kirjeldus : DIODE GEN PURP 100V 1A DO213AB
seeria : SUPERECTIFIER®
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 100V
Praegune - keskmine puhastatud (Io) : 1A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.1V @ 1A
Kiirus : Standard Recovery >500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : -
Praegune - vastupidine leke @ Vr : 10µA @ 100V
Mahtuvus @ Vr, F : 8pF @ 4V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : DO-213AB, MELF (Glass)
Tarnija seadme pakett : DO-213AB
Töötemperatuur - ristmik : -65°C ~ 175°C
kaal : -
tingimus : Uus ja originaal
seotud lingid : 1N64 , 1N6479

dokumendid 1N6479-E3/97

andmelehe : 1N6479-E3/97.pdf

Seotud tooted 1N6479-E3/97 Vishay Semiconductor Diodes Division

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