JAN1N5553US - DIODE GEN PURP 800V 3A B-MELF

Tootja arv
Sisemine osa number
Lühikirjeldus
DIODE GEN PURP 800V 3A B-MELF
RoHS-staatus
Pliivaba / RoHS Vastavuses
Tarne aeg
1-2 päeva
saadaval Kogus
36267 Pieces
Viide Hind
USD 10.8273
Meie hind
- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on JAN1N5553US laos müüa.
Saatmine võimalusi ja tarneaeg:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Maksevõimalused:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spetsifikatsioonid JAN1N5553US

kvaliteedi tagamise : 365 päeva garantii
stock Resource : Frantsiisi Edasimüüja / Tootja Direct
Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Osa number : JAN1N5553US
tootja : Microsemi Corporation
kirjeldus : DIODE GEN PURP 800V 3A B-MELF
seeria : Military, MIL-PRF-19500/420
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 800V
Praegune - keskmine puhastatud (Io) : 3A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.3V @ 9A
Kiirus : Standard Recovery >500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 2µs
Praegune - vastupidine leke @ Vr : 1µA @ 800V
Mahtuvus @ Vr, F : -
Paigaldus tüüp : Surface Mount
Pakett / kohver : SQ-MELF, B
Tarnija seadme pakett : D-5B
Töötemperatuur - ristmik : -65°C ~ 175°C
kaal : -
tingimus : Uus ja originaal
seotud lingid : JAN , JAN1N

dokumendid JAN1N5553US

andmelehe : JAN1N5553US.pdf

Seotud tooted JAN1N5553US Microsemi Corporation

Osa number Bränd kirjeldus Osta

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