RCD100N19TL - MOSFET N-CH 190V 10A CPT3

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RCD100N19TL

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AX-RCD100N19TL

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Rohm Semiconductor

Lühikirjeldus

MOSFET N-CH 190V 10A CPT3

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1012130 Pieces

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~~USD 0.2772~~

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- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on RCD100N19TL laos müüa.

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spetsifikatsioonid RCD100N19TL

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : RCD100N19TL

tootja : Rohm Semiconductor

kirjeldus : MOSFET N-CH 190V 10A CPT3

seeria : -

Osa olek : Not For New Designs

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 190V

Praegune - pidev äravool (id) @ 25 ° C : 10A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4V, 10V

Rds sees (max) @ id, Vgs : 182 mOhm @ 5A, 10V

Vgs (th) (maksimaalselt) @ id : 2.5V @ 1mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 52nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 2000pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 850mW (Ta), 20W (Tc)

Töötemperatuur : 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : CPT3

Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63

kaal : -

tingimus : Uus ja originaal

seotud lingid : RCD , RCD10

dokumendid RCD100N19TL

andmelehe : RCD100N19TL.pdf

Seotud tooted RCD100N19TL Rohm Semiconductor

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