SIHB15N50E-GE3 - MOSFET N-CH 500V 14.5A TO-263

Tootja arv
Sisemine osa number
Lühikirjeldus
MOSFET N-CH 500V 14.5A TO-263
RoHS-staatus
Pliivaba / RoHS Vastavuses
Tarne aeg
1-2 päeva
saadaval Kogus
147970 Pieces
Viide Hind
USD 1.896
Meie hind
- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on SIHB15N50E-GE3 laos müüa.
Saatmine võimalusi ja tarneaeg:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Maksevõimalused:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spetsifikatsioonid SIHB15N50E-GE3

kvaliteedi tagamise : 365 päeva garantii
stock Resource : Frantsiisi Edasimüüja / Tootja Direct
Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Osa number : SIHB15N50E-GE3
tootja : Vishay Siliconix
kirjeldus : MOSFET N-CH 500V 14.5A TO-263
seeria : -
Osa olek : Active
FET tüüp : N-Channel
Tehnoloogia : MOSFET (Metal Oxide)
Tühjendage toitepingele (Vdss) : 500V
Praegune - pidev äravool (id) @ 25 ° C : 14.5A (Tc)
Ajami pinge (max Rds sees, min Rds sees) : 10V
Rds sees (max) @ id, Vgs : 280 mOhm @ 7.5A, 10V
Vgs (th) (maksimaalselt) @ id : 4V @ 250µA
Värava laadimine (Qg) (maksimaalselt) @ Vgs : 66nC @ 10V
VG (maksimaalselt) : ±30V
Sisendmahtuvus (Ciss) (Max) @ Vds : 1162pF @ 100V
FET funktsioon : -
Võimsuse hajumine (max) : 156W (Tc)
Töötemperatuur : -55°C ~ 150°C (TJ)
Paigaldus tüüp : Surface Mount
Tarnija seadme pakett : D²PAK (TO-263)
Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
kaal : -
tingimus : Uus ja originaal
seotud lingid : SIHB , SIHB15N

dokumendid SIHB15N50E-GE3

andmelehe : SIHB15N50E-GE3.pdf

Seotud tooted SIHB15N50E-GE3 Vishay Siliconix

Osa number Bränd kirjeldus Osta

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