EGL41FHE3_A/H - DIODE GEN PURP 300V 1A DO213AB

Tootja arv

EGL41FHE3_A/H

Sisemine osa number

AX-EGL41FHE3_A/H

tootja

Vishay Semiconductor Diodes Division

Lühikirjeldus

DIODE GEN PURP 300V 1A DO213AB

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

3549195 Pieces

Viide Hind

~~USD 0.07905~~

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- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on EGL41FHE3_A/H laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid EGL41FHE3_A/H

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : EGL41FHE3_A/H

tootja : Vishay Semiconductor Diodes Division

kirjeldus : DIODE GEN PURP 300V 1A DO213AB

seeria : Automotive, AEC-Q101, Superectifier®

Osa olek : Active

Dioodi tüüp : Standard

Pinge - tagurpidi alalisvool (Vr) (max) : 300V

Praegune - keskmine puhastatud (Io) : 1A

Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.25V @ 1A

Kiirus : Fast Recovery =< 500ns, > 200mA (Io)

Vastupidine taastumisaeg (trr) : 50ns

Praegune - vastupidine leke @ Vr : 5µA @ 300V

Mahtuvus @ Vr, F : 14pF @ 4V, 1MHz

Paigaldus tüüp : Surface Mount

Pakett / kohver : DO-213AB, MELF (Glass)

Tarnija seadme pakett : DO-213AB

Töötemperatuur - ristmik : -65°C ~ 175°C

kaal : -

tingimus : Uus ja originaal

seotud lingid : EGL4 , EGL41F

dokumendid EGL41FHE3_A/H

andmelehe : EGL41FHE3_A/H.pdf

Seotud tooted EGL41FHE3_A/H Vishay Semiconductor Diodes Division

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