SIDR680DP-T1-GE3 - MOSFET N-CH 80V

Tootja arv

SIDR680DP-T1-GE3

Sisemine osa number

AX-SIDR680DP-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 80V

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

316705 Pieces

Viide Hind

~~USD 0.885858~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on SIDR680DP-T1-GE3 laos müüa.

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spetsifikatsioonid SIDR680DP-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SIDR680DP-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 80V

seeria : TrenchFET® Gen IV

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 80V

Praegune - pidev äravool (id) @ 25 ° C : 32.8A (Ta), 100A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 7.5V, 10V

Rds sees (max) @ id, Vgs : 2.9 mOhm @ 20A, 10V

Vgs (th) (maksimaalselt) @ id : 3.4V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 105nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 5150pF @ 40V

FET funktsioon : -

Võimsuse hajumine (max) : 6.25W (Ta), 125W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PowerPAK® SO-8DC

Pakett / kohver : PowerPAK® SO-8

kaal : -

tingimus : Uus ja originaal

seotud lingid : SIDR6 , SIDR680D

dokumendid SIDR680DP-T1-GE3

andmelehe : SIDR680DP-T1-GE3.pdf

Seotud tooted SIDR680DP-T1-GE3 Vishay Siliconix

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WF165336WQ75238BJ1	Vishay Beyschlag	CAP CER 7500PF 22.5KV SCREW.
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WI140266WQ75236BJ2	Vishay Beyschlag	CAP CER 7500PF 22.5KV SCREW.