ISL9R860S3ST - DIODE GEN PURP 600V 8A TO263-2

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ISL9R860S3ST

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ON Semiconductor

Lühikirjeldus

DIODE GEN PURP 600V 8A TO263-2

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

510735 Pieces

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~~USD 0.54933~~

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AX Semiconductor on ISL9R860S3ST laos müüa.

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spetsifikatsioonid ISL9R860S3ST

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : ISL9R860S3ST

tootja : ON Semiconductor

kirjeldus : DIODE GEN PURP 600V 8A TO263-2

seeria : Stealth™

Osa olek : Active

Dioodi tüüp : Standard

Pinge - tagurpidi alalisvool (Vr) (max) : 600V

Praegune - keskmine puhastatud (Io) : 8A

Pinge - edasi (Vf) (maksimaalselt) @ kui : 2.4V @ 8A

Kiirus : Fast Recovery =< 500ns, > 200mA (Io)

Vastupidine taastumisaeg (trr) : 30ns

Praegune - vastupidine leke @ Vr : 100µA @ 600V

Mahtuvus @ Vr, F : -

Paigaldus tüüp : Surface Mount

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Tarnija seadme pakett : TO-263AB (D²PAK)

Töötemperatuur - ristmik : -55°C ~ 175°C

kaal : -

tingimus : Uus ja originaal

seotud lingid : ISL9 , ISL9R8

dokumendid ISL9R860S3ST

andmelehe : ISL9R860S3ST.pdf

Seotud tooted ISL9R860S3ST ON Semiconductor

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WF125300WJ76238BJ2	Vishay Beyschlag	CAP CER 7600PF 14KV SCREW.
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