IPD12N03LB G - MOSFET N-CH 30V 30A TO-252

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IPD12N03LB G

Sisemine osa number

AX-IPD12N03LB G

tootja

Infineon Technologies

Lühikirjeldus

MOSFET N-CH 30V 30A TO-252

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

65585 Pieces

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- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on IPD12N03LB G laos müüa.

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spetsifikatsioonid IPD12N03LB G

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Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IPD12N03LB G

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 30V 30A TO-252

seeria : OptiMOS™

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : 30A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 11.6 mOhm @ 30A, 10V

Vgs (th) (maksimaalselt) @ id : 2V @ 20µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 11nC @ 5V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1300pF @ 15V

FET funktsioon : -

Võimsuse hajumine (max) : 52W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PG-TO252-3

Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63

kaal : -

tingimus : Uus ja originaal

seotud lingid : IPD1 , IPD12N

dokumendid IPD12N03LB G

andmelehe : IPD12N03LB G.pdf

Seotud tooted IPD12N03LB G Infineon Technologies

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