IPI024N06N3GHKSA1 - MOSFET N-CH 60V 120A TO262-3

Tootja arv
Sisemine osa number
Lühikirjeldus
MOSFET N-CH 60V 120A TO262-3
RoHS-staatus
Pliivaba / RoHS Vastavuses
Tarne aeg
1-2 päeva
saadaval Kogus
8368 Pieces
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USD 0
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AX Semiconductor on IPI024N06N3GHKSA1 laos müüa.
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spetsifikatsioonid IPI024N06N3GHKSA1

kvaliteedi tagamise : 365 päeva garantii
stock Resource : Frantsiisi Edasimüüja / Tootja Direct
Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Osa number : IPI024N06N3GHKSA1
tootja : Infineon Technologies
kirjeldus : MOSFET N-CH 60V 120A TO262-3
seeria : OptiMOS™
Osa olek : Obsolete
FET tüüp : N-Channel
Tehnoloogia : MOSFET (Metal Oxide)
Tühjendage toitepingele (Vdss) : 60V
Praegune - pidev äravool (id) @ 25 ° C : 120A (Tc)
Ajami pinge (max Rds sees, min Rds sees) : 10V
Rds sees (max) @ id, Vgs : 2.4 mOhm @ 100A, 10V
Vgs (th) (maksimaalselt) @ id : 4V @ 196µA
Värava laadimine (Qg) (maksimaalselt) @ Vgs : 275nC @ 10V
VG (maksimaalselt) : ±20V
Sisendmahtuvus (Ciss) (Max) @ Vds : 23000pF @ 30V
FET funktsioon : -
Võimsuse hajumine (max) : 250W (Tc)
Töötemperatuur : -55°C ~ 175°C (TJ)
Paigaldus tüüp : Through Hole
Tarnija seadme pakett : PG-TO262-3
Pakett / kohver : TO-262-3 Long Leads, I²Pak, TO-262AA
kaal : -
tingimus : Uus ja originaal
seotud lingid : IPI02 , IPI024N0

dokumendid IPI024N06N3GHKSA1

andmelehe : IPI024N06N3GHKSA1.pdf

Seotud tooted IPI024N06N3GHKSA1 Infineon Technologies

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