BSC011N03LSATMA1 - MOSFET N-CH 30V 100A 8TDSON

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BSC011N03LSATMA1

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AX-BSC011N03LSATMA1

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Infineon Technologies

Lühikirjeldus

MOSFET N-CH 30V 100A 8TDSON

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

595540 Pieces

Viide Hind

~~USD 0.471108~~

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- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on BSC011N03LSATMA1 laos müüa.

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spetsifikatsioonid BSC011N03LSATMA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : BSC011N03LSATMA1

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 30V 100A 8TDSON

seeria : OptiMOS™

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : 37A (Ta), 100A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 1.1 mOhm @ 30A, 10V

Vgs (th) (maksimaalselt) @ id : 2.2V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 72nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 4700pF @ 15V

FET funktsioon : -

Võimsuse hajumine (max) : 2.5W (Ta), 96W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PG-TDSON-8

Pakett / kohver : 8-PowerTDFN

kaal : -

tingimus : Uus ja originaal

seotud lingid : BSC01 , BSC011N0

dokumendid BSC011N03LSATMA1

andmelehe : BSC011N03LSATMA1.pdf

Seotud tooted BSC011N03LSATMA1 Infineon Technologies

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