RN1962FE(TE85L,F) - TRANS 2NPN PREBIAS 0.1W ES6

Tootja arv

RN1962FE(TE85L,F)

Sisemine osa number

AX-RN1962FE(TE85L,F)

tootja

Toshiba Semiconductor and Storage

Lühikirjeldus

TRANS 2NPN PREBIAS 0.1W ES6

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

31171 Pieces

Viide Hind

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Meie hind

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AX Semiconductor on RN1962FE(TE85L,F) laos müüa.

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spetsifikatsioonid RN1962FE(TE85L,F)

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : RN1962FE(TE85L,F)

tootja : Toshiba Semiconductor and Storage

kirjeldus : TRANS 2NPN PREBIAS 0.1W ES6

seeria : -

Osa olek : Obsolete

Transistori tüüp : 2 NPN - Pre-Biased (Dual)

Praegune - koguja (Ic) (maksimaalselt) : 100mA

Pinge - kollektori emitteri jaotus (max) : 50V

Takisti - alus (R1) : 10 kOhms

Takisti - emitteri alus (R2) : 10 kOhms

Alalisvoolu võimendus (hFE) (min) @ Ic, Vce : 50 @ 10mA, 5V

Vce küllastus (maksimaalselt) @ Ib, Ic : 300mV @ 250µA, 5mA

Praegune - koguja väljalülitus (max) : 100nA (ICBO)

Sagedus - üleminek : 250MHz

Võimsus - max : 100mW

Paigaldus tüüp : Surface Mount

Pakett / kohver : SOT-563, SOT-666

Tarnija seadme pakett : ES6

kaal : -

tingimus : Uus ja originaal

seotud lingid : RN196 , RN1962FE

dokumendid RN1962FE(TE85L,F)

andmelehe : RN1962FE(TE85L,F).pdf

Seotud tooted RN1962FE(TE85L,F) Toshiba Semiconductor and Storage

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