IPB120N04S4L02ATMA1 - MOSFET N-CH TO263-3

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IPB120N04S4L02ATMA1

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AX-IPB120N04S4L02ATMA1

tootja

Infineon Technologies

Lühikirjeldus

MOSFET N-CH TO263-3

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

399190 Pieces

Viide Hind

~~USD 0.702822~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on IPB120N04S4L02ATMA1 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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spetsifikatsioonid IPB120N04S4L02ATMA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IPB120N04S4L02ATMA1

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH TO263-3

seeria : Automotive, AEC-Q101, OptiMOS™

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 40V

Praegune - pidev äravool (id) @ 25 ° C : 120A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 1.7 mOhm @ 100A, 10V

Vgs (th) (maksimaalselt) @ id : 2.2V @ 110µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 190nC @ 10V

VG (maksimaalselt) : +20V, -16V

Sisendmahtuvus (Ciss) (Max) @ Vds : 14560pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 158W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : D²PAK (TO-263AB)

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

kaal : -

tingimus : Uus ja originaal

seotud lingid : IPB120 , IPB120N04

dokumendid IPB120N04S4L02ATMA1

andmelehe : IPB120N04S4L02ATMA1.pdf

Seotud tooted IPB120N04S4L02ATMA1 Infineon Technologies

Osa number	Bränd	kirjeldus
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