BSP315P-E6327 - MOSFET P-CH 60V 1.17A SOT-223

Tootja arv

BSP315P-E6327

Sisemine osa number

AX-BSP315P-E6327

tootja

Infineon Technologies

Lühikirjeldus

MOSFET P-CH 60V 1.17A SOT-223

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

65645 Pieces

Viide Hind

~~USD 0~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on BSP315P-E6327 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid BSP315P-E6327

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : BSP315P-E6327

tootja : Infineon Technologies

kirjeldus : MOSFET P-CH 60V 1.17A SOT-223

seeria : SIPMOS®

Osa olek : Obsolete

FET tüüp : P-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 60V

Praegune - pidev äravool (id) @ 25 ° C : 1.17A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 800 mOhm @ 1.17A, 10V

Vgs (th) (maksimaalselt) @ id : 2V @ 160µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 7.8nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 160pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 1.8W (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PG-SOT223-4

Pakett / kohver : TO-261-4, TO-261AA

kaal : -

tingimus : Uus ja originaal

seotud lingid : BSP3 , BSP315

dokumendid BSP315P-E6327

andmelehe : BSP315P-E6327.pdf

Seotud tooted BSP315P-E6327 Infineon Technologies

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