GPAS1002 MNG - DIODE GEN PURP 100V 10A TO263AB

Tootja arv
Sisemine osa number
Lühikirjeldus
DIODE GEN PURP 100V 10A TO263AB
RoHS-staatus
Pliivaba / RoHS Vastavuses
Tarne aeg
1-2 päeva
saadaval Kogus
1791590 Pieces
Viide Hind
USD 0.1566
Meie hind
- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on GPAS1002 MNG laos müüa.
Saatmine võimalusi ja tarneaeg:
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Normal Post: 10-15 days.
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spetsifikatsioonid GPAS1002 MNG

kvaliteedi tagamise : 365 päeva garantii
stock Resource : Frantsiisi Edasimüüja / Tootja Direct
Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Osa number : GPAS1002 MNG
tootja : Taiwan Semiconductor Corporation
kirjeldus : DIODE GEN PURP 100V 10A TO263AB
seeria : -
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 100V
Praegune - keskmine puhastatud (Io) : 10A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.1V @ 10A
Kiirus : Standard Recovery >500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : -
Praegune - vastupidine leke @ Vr : 5µA @ 100V
Mahtuvus @ Vr, F : 50pF @ 4V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Tarnija seadme pakett : TO-263AB (D²PAK)
Töötemperatuur - ristmik : -55°C ~ 150°C
kaal : -
tingimus : Uus ja originaal
seotud lingid : GPAS , GPAS10

dokumendid GPAS1002 MNG

andmelehe : GPAS1002 MNG.pdf

Seotud tooted GPAS1002 MNG Taiwan Semiconductor Corporation

Osa number Bränd kirjeldus Osta

BZ120055WC16136CB1

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CAP CER 10PF 100V BP 0805.

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CAP CER 10000PF 14KV SCREW.