IPB136N08N3 G - MOSFET N-CH 80V 45A TO263-3

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IPB136N08N3 G

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AX-IPB136N08N3 G

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Infineon Technologies

Lühikirjeldus

MOSFET N-CH 80V 45A TO263-3

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

15688 Pieces

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spetsifikatsioonid IPB136N08N3 G

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IPB136N08N3 G

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 80V 45A TO263-3

seeria : OptiMOS™

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 80V

Praegune - pidev äravool (id) @ 25 ° C : 45A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 6V, 10V

Rds sees (max) @ id, Vgs : 13.6 mOhm @ 45A, 10V

Vgs (th) (maksimaalselt) @ id : 3.5V @ 33µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 25nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1730pF @ 40V

FET funktsioon : -

Võimsuse hajumine (max) : 79W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : D²PAK (TO-263AB)

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

kaal : -

tingimus : Uus ja originaal

seotud lingid : IPB1 , IPB136

dokumendid IPB136N08N3 G

andmelehe : IPB136N08N3 G.pdf

Seotud tooted IPB136N08N3 G Infineon Technologies

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