SE10FGHM3/I - DIODE GEN PURP 400V 1A DO219AB

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SE10FGHM3/I

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AX-SE10FGHM3/I

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Vishay Semiconductor Diodes Division

Lühikirjeldus

DIODE GEN PURP 400V 1A DO219AB

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

6118905 Pieces

Viide Hind

~~USD 0.045852~~

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- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on SE10FGHM3/I laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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spetsifikatsioonid SE10FGHM3/I

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SE10FGHM3/I

tootja : Vishay Semiconductor Diodes Division

kirjeldus : DIODE GEN PURP 400V 1A DO219AB

seeria : Automotive, AEC-Q101

Osa olek : Active

Dioodi tüüp : Standard

Pinge - tagurpidi alalisvool (Vr) (max) : 400V

Praegune - keskmine puhastatud (Io) : 1A

Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.05V @ 1A

Kiirus : Standard Recovery >500ns, > 200mA (Io)

Vastupidine taastumisaeg (trr) : 780ns

Praegune - vastupidine leke @ Vr : 5µA @ 400V

Mahtuvus @ Vr, F : 7.5pF @ 4V, 1MHz

Paigaldus tüüp : Surface Mount

Pakett / kohver : DO-219AB

Tarnija seadme pakett : DO-219AB (SMF)

Töötemperatuur - ristmik : -55°C ~ 175°C

kaal : -

tingimus : Uus ja originaal

seotud lingid : SE1 , SE10F

dokumendid SE10FGHM3/I

andmelehe : SE10FGHM3/I.pdf

Seotud tooted SE10FGHM3/I Vishay Semiconductor Diodes Division

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