IRF7807VD2PBF - MOSFET N-CH 30V 8.3A 8-SOIC

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IRF7807VD2PBF

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AX-IRF7807VD2PBF

tootja

Infineon Technologies

Lühikirjeldus

MOSFET N-CH 30V 8.3A 8-SOIC

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

68830 Pieces

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~~USD 0~~

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- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on IRF7807VD2PBF laos müüa.

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spetsifikatsioonid IRF7807VD2PBF

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IRF7807VD2PBF

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 30V 8.3A 8-SOIC

seeria : FETKY™

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : 8.3A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V

Rds sees (max) @ id, Vgs : 25 mOhm @ 7A, 4.5V

Vgs (th) (maksimaalselt) @ id : 1V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 14nC @ 4.5V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : -

FET funktsioon : Schottky Diode (Isolated)

Võimsuse hajumine (max) : 2.5W (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 8-SO

Pakett / kohver : 8-SOIC (0.154", 3.90mm Width)

kaal : -

tingimus : Uus ja originaal

seotud lingid : IRF7 , IRF780

dokumendid IRF7807VD2PBF

andmelehe : IRF7807VD2PBF.pdf

Seotud tooted IRF7807VD2PBF Infineon Technologies

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