SPB10N10 G - MOSFET N-CH 100V 10.3A D2PAK

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SPB10N10 G

Sisemine osa number

AX-SPB10N10 G

tootja

Infineon Technologies

Lühikirjeldus

MOSFET N-CH 100V 10.3A D2PAK

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

9094 Pieces

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~~USD 0~~

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- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on SPB10N10 G laos müüa.

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Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid SPB10N10 G

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SPB10N10 G

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 100V 10.3A D2PAK

seeria : SIPMOS®

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 100V

Praegune - pidev äravool (id) @ 25 ° C : 10.3A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 170 mOhm @ 7.8A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 21µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 19.4nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 426pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 50W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PG-TO263-3-2

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

kaal : -

tingimus : Uus ja originaal

seotud lingid : SPB , SPB10

dokumendid SPB10N10 G

andmelehe : SPB10N10 G.pdf

Seotud tooted SPB10N10 G Infineon Technologies

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