IRF630BTSTU_FP001 - MOSFET N-CH 200V 9A TO-220

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IRF630BTSTU_FP001

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Lühikirjeldus

MOSFET N-CH 200V 9A TO-220

RoHS-staatus

Pliivaba / RoHS Vastavuses

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1-2 päeva

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AX Semiconductor on IRF630BTSTU_FP001 laos müüa.

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spetsifikatsioonid IRF630BTSTU_FP001

kvaliteedi tagamise : 365 päeva garantii

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Osa number : IRF630BTSTU_FP001

tootja : ON Semiconductor

kirjeldus : MOSFET N-CH 200V 9A TO-220

seeria : -

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 200V

Praegune - pidev äravool (id) @ 25 ° C : 9A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 400 mOhm @ 4.5A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 29nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 720pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 72W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : TO-220-3

Pakett / kohver : TO-220-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : IRF63 , IRF630BT

dokumendid IRF630BTSTU_FP001

andmelehe : IRF630BTSTU_FP001.pdf

Seotud tooted IRF630BTSTU_FP001 ON Semiconductor

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