EGL41BHE3_A/I - DIODE GEN PURP 100V 1A DO213AB

Tootja arv

EGL41BHE3_A/I

Sisemine osa number

AX-EGL41BHE3_A/I

tootja

Vishay Semiconductor Diodes Division

Lühikirjeldus

DIODE GEN PURP 100V 1A DO213AB

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

3793970 Pieces

Viide Hind

~~USD 0.07395~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on EGL41BHE3_A/I laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid EGL41BHE3_A/I

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : EGL41BHE3_A/I

tootja : Vishay Semiconductor Diodes Division

kirjeldus : DIODE GEN PURP 100V 1A DO213AB

seeria : Automotive, AEC-Q101, Superectifier®

Osa olek : Active

Dioodi tüüp : Standard

Pinge - tagurpidi alalisvool (Vr) (max) : 100V

Praegune - keskmine puhastatud (Io) : 1A

Pinge - edasi (Vf) (maksimaalselt) @ kui : 1V @ 1A

Kiirus : Fast Recovery =< 500ns, > 200mA (Io)

Vastupidine taastumisaeg (trr) : 50ns

Praegune - vastupidine leke @ Vr : 5µA @ 100V

Mahtuvus @ Vr, F : 20pF @ 4V, 1MHz

Paigaldus tüüp : Surface Mount

Pakett / kohver : DO-213AB, MELF (Glass)

Tarnija seadme pakett : DO-213AB

Töötemperatuur - ristmik : -65°C ~ 175°C

kaal : -

tingimus : Uus ja originaal

seotud lingid : EGL4 , EGL41B

dokumendid EGL41BHE3_A/I

andmelehe : EGL41BHE3_A/I.pdf

Seotud tooted EGL41BHE3_A/I Vishay Semiconductor Diodes Division

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