US1J-E3/5AT - DIODE GEN PURP 600V 1A DO214AC

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US1J-E3/5AT

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AX-US1J-E3/5AT

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Vishay Semiconductor Diodes Division

Lühikirjeldus

DIODE GEN PURP 600V 1A DO214AC

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

4429355 Pieces

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~~USD 0.063342~~

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AX Semiconductor on US1J-E3/5AT laos müüa.

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spetsifikatsioonid US1J-E3/5AT

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : US1J-E3/5AT

tootja : Vishay Semiconductor Diodes Division

kirjeldus : DIODE GEN PURP 600V 1A DO214AC

seeria : -

Osa olek : Active

Dioodi tüüp : Standard

Pinge - tagurpidi alalisvool (Vr) (max) : 600V

Praegune - keskmine puhastatud (Io) : 1A

Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.7V @ 1A

Kiirus : Fast Recovery =< 500ns, > 200mA (Io)

Vastupidine taastumisaeg (trr) : 75ns

Praegune - vastupidine leke @ Vr : 10µA @ 600V

Mahtuvus @ Vr, F : 10pF @ 4V, 1MHz

Paigaldus tüüp : Surface Mount

Pakett / kohver : DO-214AC, SMA

Tarnija seadme pakett : DO-214AC (SMA)

Töötemperatuur - ristmik : -55°C ~ 150°C

kaal : -

tingimus : Uus ja originaal

seotud lingid : US1 , US1J-

dokumendid US1J-E3/5AT

andmelehe : US1J-E3/5AT.pdf

Seotud tooted US1J-E3/5AT Vishay Semiconductor Diodes Division

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WF110250WJ50238BJ1	Vishay Beyschlag	CAP CER 5000PF 14KV SCREW.
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