NSB8BTHE3_A/P - DIODE GEN PURP 100V 8A TO263AB

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NSB8BTHE3_A/P

Sisemine osa number

AX-NSB8BTHE3_A/P

tootja

Vishay Semiconductor Diodes Division

Lühikirjeldus

DIODE GEN PURP 100V 8A TO263AB

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

643550 Pieces

Viide Hind

~~USD 0.43596~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on NSB8BTHE3_A/P laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid NSB8BTHE3_A/P

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : NSB8BTHE3_A/P

tootja : Vishay Semiconductor Diodes Division

kirjeldus : DIODE GEN PURP 100V 8A TO263AB

seeria : Automotive, AEC-Q101

Osa olek : Active

Dioodi tüüp : Standard

Pinge - tagurpidi alalisvool (Vr) (max) : 100V

Praegune - keskmine puhastatud (Io) : 8A

Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.1V @ 8A

Kiirus : Standard Recovery >500ns, > 200mA (Io)

Vastupidine taastumisaeg (trr) : -

Praegune - vastupidine leke @ Vr : 10µA @ 100V

Mahtuvus @ Vr, F : 55pF @ 4V, 1MHz

Paigaldus tüüp : Surface Mount

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Tarnija seadme pakett : TO-263AB

Töötemperatuur - ristmik : -55°C ~ 150°C

kaal : -

tingimus : Uus ja originaal

seotud lingid : NSB8 , NSB8BT

dokumendid NSB8BTHE3_A/P

andmelehe : NSB8BTHE3_A/P.pdf

Seotud tooted NSB8BTHE3_A/P Vishay Semiconductor Diodes Division

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CDR32BP102BJZRAC	Vishay Vitramon	CAP CER 1000PF 100V BP 1206.
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