S8CJ-M3/I - DIODE GEN PURP 600V 8A DO214AB

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S8CJ-M3/I

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AX-S8CJ-M3/I

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Vishay Semiconductor Diodes Division

Lühikirjeldus

DIODE GEN PURP 600V 8A DO214AB

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1686885 Pieces

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~~USD 0.16632~~

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- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on S8CJ-M3/I laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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spetsifikatsioonid S8CJ-M3/I

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : S8CJ-M3/I

tootja : Vishay Semiconductor Diodes Division

kirjeldus : DIODE GEN PURP 600V 8A DO214AB

seeria : -

Osa olek : Active

Dioodi tüüp : Standard

Pinge - tagurpidi alalisvool (Vr) (max) : 600V

Praegune - keskmine puhastatud (Io) : 8A

Pinge - edasi (Vf) (maksimaalselt) @ kui : 985mV @ 8A

Kiirus : Standard Recovery >500ns, > 200mA (Io)

Vastupidine taastumisaeg (trr) : 4µs

Praegune - vastupidine leke @ Vr : 10µA @ 600V

Mahtuvus @ Vr, F : 79pF @ 4V, 1MHz

Paigaldus tüüp : Surface Mount

Pakett / kohver : DO-214AB, SMC

Tarnija seadme pakett : DO-214AB (SMC)

Töötemperatuur - ristmik : -55°C ~ 150°C

kaal : -

tingimus : Uus ja originaal

seotud lingid : S8C , S8CJ

dokumendid S8CJ-M3/I

andmelehe : S8CJ-M3/I.pdf

Seotud tooted S8CJ-M3/I Vishay Semiconductor Diodes Division

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