S1FLJ-GS18 - DIODE GEN PURP 600V 1A DO219AB

Tootja arv
Sisemine osa number
Lühikirjeldus
DIODE GEN PURP 600V 1A DO219AB
RoHS-staatus
Pliivaba / RoHS Vastavuses
Tarne aeg
1-2 päeva
saadaval Kogus
10774355 Pieces
Viide Hind
USD 0.02604
Meie hind
- (Palun võtke meiega parem hind: [email protected])

AX Semiconductor on S1FLJ-GS18 laos müüa.
Saatmine võimalusi ja tarneaeg:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Maksevõimalused:
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spetsifikatsioonid S1FLJ-GS18

kvaliteedi tagamise : 365 päeva garantii
stock Resource : Frantsiisi Edasimüüja / Tootja Direct
Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Osa number : S1FLJ-GS18
tootja : Vishay Semiconductor Diodes Division
kirjeldus : DIODE GEN PURP 600V 1A DO219AB
seeria : -
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 600V
Praegune - keskmine puhastatud (Io) : 700mA
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.1V @ 1A
Kiirus : Standard Recovery >500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 1.8µs
Praegune - vastupidine leke @ Vr : 10µA @ 600V
Mahtuvus @ Vr, F : 4pF @ 4V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : DO-219AB
Tarnija seadme pakett : DO-219AB (SMF)
Töötemperatuur - ristmik : -55°C ~ 150°C
kaal : -
tingimus : Uus ja originaal
seotud lingid : S1F , S1FLJ

dokumendid S1FLJ-GS18

andmelehe : S1FLJ-GS18.pdf

Seotud tooted S1FLJ-GS18 Vishay Semiconductor Diodes Division

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