K4F8E3S4HB-MHCJ PDF Teabelehe Lae - 8 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production

Osa number : K4F8E3S4HB-MHCJ

tootja : Samsung Semiconductor

kirjeldus : 8 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production

seeria : DDR3

tihedus : 8 Gb

Org. : x32

kiirus : 3733 Mbps

Pinge : 1.8 / 1.1 / 1.1 V

Temp. : -40 ~ 105 °C

pakend : 200FBGA

toote staatus : Mass Production

kaal : -

tingimus : Uus ja originaal

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

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8 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

83735 Pieces

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Osa number	Bränd	kirjeldus
EPM7256AEFI100-7N	Intel	IC CPLD 256MC 7.5NS 100FBGA
XCR3384XL-12TQ144C	Xilinx Inc.	IC CPLD 384MC 10.8NS 144QFP
EPM7512AETC144-12N	Intel	IC CPLD 512MC 12NS 144TQFP
EPM2210F324A5N	Intel	IC CPLD 1700MC 7NS 324FBGA
ISPLSI 1016E-80LTN44I	Lattice Semiconductor Corporation	IC CPLD 64MC 15NS 44TQFP
XCR3384XL-12TQ144I	Xilinx Inc.	IC CPLD 384MC 10.8NS 144QFP
EPM7256AETC100-5	Intel	IC CPLD 256MC 5.5NS 100TQFP
M4A5-192/96-6VNC	Lattice Semiconductor Corporation	IC CPLD 192MC 6NS 144TQFP
LC4384C-5TN176I	Lattice Semiconductor Corporation	IC CPLD 384MC 5NS 176TQFP
XCR3512XL-12FT256I	Xilinx Inc.	IC CPLD 512MC 10.8NS 256BGA

K4F8E3S4HB-MHCJ Teabelehe